The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Nov. 19, 2013
Stmicroelectronics SA, Montrouge, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
David Petit, Grenoble, FR;
Sylvain Joblot, Bizonnes, FR;
Pierre Bar, Grenoble, FR;
Jean-Francois Carpentier, Grenoble, FR;
Pierre Dautriche, Montbonnot, FR;
STMICROELECTRONICS SA, Montrouge, FR;
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
Abstract
A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.