The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jun. 30, 2015
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Motomu Kurata, Kanagawa, JP;
Ryota Hodo, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Yuki Hata, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 23/485 (2006.01); H01L 27/1156 (2017.01); H01L 27/06 (2006.01); H01L 21/8258 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/8258 (2013.01); H01L 23/485 (2013.01); H01L 27/0688 (2013.01); H01L 27/092 (2013.01); H01L 27/1156 (2013.01); H01L 27/124 (2013.01); H01L 29/24 (2013.01); H01L 2924/0002 (2013.01);
Abstract
To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.