The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
May. 14, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Ming Chang, Hsinchu, TW;
Chi-Wen Liu, Hsinchu, TW;
Hsin-Chieh Huang, Hsinchu, TW;
Cheng-Chien Li, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/36 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 29/0649 (2013.01); H01L 29/401 (2013.01); H01L 29/4916 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.