The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jan. 22, 2016
Zing Semiconductor Corporation, Shanghai, CN;
Deyuan Xiao, Shanghai, CN;
Richard Chang, Shanghai, CN;
ZING SEMICONDUCTOR CORPORATION, Shanghai, CN;
Abstract
A vertical transistor and the fabrication method. The transistor comprises a first surface and a second surface that is opposite to the first surface. A drift region of the first doping type, this drift region is located between the first surface and the second surface; at least one source region of the first doping type and the source region being located between the drift region and the first surface, with a first dielectric layer located between adjacent source regions; at least one drain region with said first doping type and said drain region being located between said drift region and said second surface, a gate being provided between adjacent drain regions. Said gate includes a gate electrode and a gate dielectric layer disposed between said gate electrode and said drift region, and the second dielectric layer being positioned between said gate electrode and said second surface.