The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Sep. 02, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Mei-Chun Chen, Zhudong Township, TW;
Ching-Chen Hao, Zhubei, TW;
Wen-Hsin Chan, Zhubei, TW;
Chao-Jui Wang, Zhudong Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with a gate stack formed on the semiconductor substrate. The method also includes forming a protection layer doped with a quadrivalent element to cover a first doped region formed in the semiconductor substrate and adjacent to the gate stack. The method further includes forming a main spacer layer on a sidewall of the gate stack to cover the protection layer and forming an insulating layer over the protection layer. In addition, the method includes forming an opening in the insulating layer to expose a second doped region formed in the semiconductor substrate and forming one contact in the opening.