The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Oct. 17, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Fu-Hsiung Yang, Zhongli, TW;
Long-Shih Lin, Zhubei, TW;
Kun-Ming Huang, Taipei, TW;
Chih-Heng Shen, Zhubei, TW;
Po-Tao Chu, New Taipei, TW;
Abstract
A bipolar transistor includes a substrate and a first well in the substrate, the first well having a first dopant type. The bipolar transistor further includes a split collector region in the first well. The split collector region includes a highly doped central region having a second dopant type opposite the first dopant type; and a lightly doped peripheral region having the second dopant type, the lightly doped peripheral region surrounding the highly doped central region. A dopant concentration of the lightly doped peripheral region is less than a dopant concentration of the highly doped central region.