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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9646889 B1

PDFFull Text
Date of Patent:
May. 09, 2017

Filed:

Jan. 21, 2016

Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrate

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chun-Wei Yu, Tainan, TW;

Hsu Ting, Tainan, TW;

Chueh-Yang Liu, Tainan, TW;

Yu-Ren Wang, Tainan, TW;

Kuang-Hsiu Chen, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Thanh V Pham

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 29/08 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/02065 (2013.01); H01L 21/28123 (2013.01); H01L 23/535 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/7848 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first gate structure on the substrate and a first spacer adjacent to the first gate structure; forming a first epitaxial layer in the substrate adjacent to the first gate structure; forming a first hard mask layer on the first gate structure; removing part of the first hard mask layer to form a protective layer on the first epitaxial layer; and removing the remaining first hard mask layer.

Find Patent Forward Citations

Yu, Chun-Wei. (2017). Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrate (U.S. Patent No. 9646889). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9646889

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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