The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Feb. 03, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chang-Sheng Tsao, Taipei, TW;
Abstract
A method of forming a semiconductor structure includes implanting neutral dopants in a first region of a substrate to form a first etching stop feature, the first etching stop feature having a depth D. The method further includes implanting neutral dopants in a second region of the substrate to form a second etching stop feature, wherein the second etching stop feature has a depth D, and Dis different from D. The method further includes etching the substrate to form a first trench and a second trench, wherein the first trench and the second trench expose the first etching stop feature and the second etching stop feature, respectively. The method further includes filling the first trench and the second trench with a dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile