The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Jul. 29, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Joon-Sung Yang, Austin, TX (US);

Darshan Kobla, Austin, TX (US);

Liwei Ju, Austin, TX (US);

David Zimmerman, El Dorado Hills, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 29/00 (2006.01); G11C 29/02 (2006.01); G11C 29/44 (2006.01); G11C 29/04 (2006.01); H01L 21/66 (2006.01); H01L 25/065 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
G11C 29/70 (2013.01); G11C 29/025 (2013.01); G11C 29/04 (2013.01); G11C 29/4401 (2013.01); G11C 29/702 (2013.01); G11C 29/785 (2013.01); G11C 29/846 (2013.01); H01L 22/22 (2013.01); H01L 25/0657 (2013.01); G11C 2213/71 (2013.01); H01L 23/481 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Self-repair logic for stacked memory architecture. An embodiment of a memory device includes a memory stack having one or more memory die elements, including a first memory die element, and a system element coupled with the memory stack. The first memory die element includes multiple through silicon vias (TSVs), the TSVs including data TSVs and one or more spare TSVs, and self-repair logic to repair operation of a defective TSV of the plurality of data TSVs, the repair of operation of the defective TSV including utilization of the one or more spare TSVs.


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