The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Dec. 10, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Hsiang-Lan Lung, Kaohsiung, TW;
Hsin Yi Ho, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A memory device includes an array of programmable resistance memory cells, a differential amplifier coupled to the array, and current circuitry providing a program current to the bit line. The differential amplifier senses a voltage difference between a first voltage on a bit line coupled to a memory cell and a reference voltage, and provides a feedback signal in response to the voltage difference. Control circuitry is coupled to the array and the differential amplifier, and configured to execute a program operation to change the memory cell in a first resistance state to a second resistance state, including selecting a voltage level for the reference voltage which correlates with the second resistance state, turning on the current circuitry to apply a program pulse of program current to the memory cell, and enabling the differential amplifier, where the current circuitry turns off the program current in response to the feedback signal.