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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9645499 B1

PDFFull Text
Date of Patent:
May. 09, 2017

Filed:

Aug. 21, 2015

Photoresist with top-coating photo-decomposable base for photolithography

Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventor:

Huayong Hu, Shanghai, CN;

Assignee:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Attorney:

Kilpatrick Townsend and Stockton LLP

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/32 (2006.01); G03F 7/09 (2006.01); G03F 7/20 (2006.01); C07C 59/347 (2006.01); C07C 59/295 (2006.01); C07C 51/14 (2006.01); C07C 59/21 (2006.01); C07C 55/32 (2006.01); C07C 51/00 (2006.01); C07C 59/315 (2006.01); C07C 55/08 (2006.01); C07C 229/24 (2006.01); C07C 55/14 (2006.01); C07C 55/12 (2006.01); G03F 7/095 (2006.01);
U.S. Cl.
CPC ...
G03F 7/325 (2013.01); C07C 51/00 (2013.01); C07C 51/14 (2013.01); C07C 55/08 (2013.01); C07C 55/12 (2013.01); C07C 55/14 (2013.01); C07C 55/32 (2013.01); C07C 59/21 (2013.01); C07C 59/295 (2013.01); C07C 59/315 (2013.01); C07C 59/347 (2013.01); C07C 229/24 (2013.01); G03F 7/0045 (2013.01); G03F 7/091 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); G03F 7/20 (2013.01);
Abstract

A lithographic method includes forming a photoresist layer on a target layer, forming a photo-decomposable base (PDB) layer on the photo resist layer, performing an exposure operation using a mask, and performing a negative development treatment to form a patterned photoresist layer on the target layer. In some cases, the photo-decomposable base layer includes a self-generating top coating photo-decomposable base (TC-PDB) layer. The method can also include forming a top surface water-resistant coating in separate coating process. In some embodiments, a top surface water-resistant coating is self-generated during a photoresist coating process.

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