The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Feb. 17, 2014
Applicant:
Oerlikon Advanced Technologies Ag, Balzers, LI;
Inventors:
Juergen Weichart, Balzers, LI;
Mohamed Elghazzali, Feldkirch, AT;
Stefan Bammesberger, Stuttgart, DE;
Dennis Minkoley, Chur, CH;
Assignee:
EVATEC ADVANCED TECHNOLOGIES AG, Balzers, LI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01); C23C 14/04 (2006.01); C23C 14/06 (2006.01); C23C 14/16 (2006.01); C23C 14/35 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3485 (2013.01); C23C 14/046 (2013.01); C23C 14/0641 (2013.01); C23C 14/165 (2013.01); C23C 14/35 (2013.01); H01J 37/345 (2013.01); H01J 37/3467 (2013.01); H01L 21/2855 (2013.01);
Abstract
A method of depositing a metallization structure () comprises depositing a TaN layer () by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate () to form a TaN seed layer (). A Ta layer () is deposited onto the TaN seed layer () by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate () to generate a self-bias field adjacent to the substrate ().