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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9642275 B1

PDFFull Text
Date of Patent:
May. 02, 2017

Filed:

Dec. 20, 2013

Power module

Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Touyou Ohashi, Kitamoto, JP;

Yoshiyuki Nagatomo, Saitama, JP;

Toshiyuki Nagase, Gotenba, JP;

Yoshirou Kuromitsu, Saitama, JP;

Assignee:

MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;

Attorney:

Locke Lord LLP

Primary Examiner:

William H Mayo, III

Assistant Examiner:

Krystal Robinson

Int. Cl.
CPC ...
H05K 7/02 (2006.01); B23K 35/26 (2006.01); C22C 13/00 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/488 (2006.01); B23K 35/30 (2006.01); B23K 35/02 (2006.01); B32B 15/01 (2006.01); B23K 101/40 (2006.01); B23K 101/42 (2006.01); H01L 23/473 (2006.01);
U.S. Cl.
CPC ...
H05K 7/02 (2013.01); B23K 35/0272 (2013.01); B23K 35/26 (2013.01); B23K 35/262 (2013.01); B23K 35/302 (2013.01); B32B 15/017 (2013.01); C22C 13/00 (2013.01); H01L 23/3735 (2013.01); H01L 23/488 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); B23K 2201/40 (2013.01); B23K 2201/42 (2013.01); H01L 23/473 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83455 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/351 (2013.01);
Abstract

A power module has a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 μm from the surface of the circuit layer in the solder layer is 10 μm or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test.

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