The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Oct. 28, 2013
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventor:
Jun-Fei Zheng, Westport, CT (US);
Assignee:
Entegris, Inc., Billerica, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/124 (2013.01); H01L 45/141 (2013.01); H01L 45/144 (2013.01); H01L 45/16 (2013.01);
Abstract
A double self-aligned phase change memory device structure, comprising spaced-apart facing phase change memory film members symmetrically arranged with respect to one another, each of the phase change memory film members at an upper portion thereof being in contact with a separate conductive element, and each of the phase change memory film members being in a range of from 5 nm to 25 nm in thickness. Also described are various methods of making such phase change memory device structure.