The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Jan. 16, 2014
Applicant:
Triquint Semiconductor, Inc., Hillsboro, OR (US);
Inventors:
Edward A. Beam, III, Plano, TX (US);
Jinqiao Xie, Allen, TX (US);
Assignee:
Qorvo US, Inc., Greensboro, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7785 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02584 (2013.01); H01L 29/2003 (2013.01);
Abstract
Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT.