The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Apr. 03, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Ze Chen, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An insulated gate bipolar transistor having a gate electrode () and an emitter electrode () is provided in a transistor region. A termination region is arranged around the transistor region. A first N type buffer layer () is provided below an N type drift layer () in the transistor region. A P type collector layer () is provided below the first N type buffer layer (). A second N type buffer layer () is provided below the N type drift layer () in the termination region. A collector electrode () is directly connected to the P type collector layer () and the second N type buffer layer (). An impurity concentration of the second N type buffer layer () decreases as a distance from the collector electrode () decreases. The second N type buffer layer () does not form any ohmic contact with the collector electrode ().