The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Feb. 26, 2008
Applicants:

Qingchun Zhang, Cary, NC (US);

Charlotte Jonas, Morrisville, NC (US);

Anant K. Agarwal, Chapel Hill, NC (US);

Inventors:

Qingchun Zhang, Cary, NC (US);

Charlotte Jonas, Morrisville, NC (US);

Anant K. Agarwal, Chapel Hill, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/063 (2013.01); H01L 29/1608 (2013.01); H01L 29/872 (2013.01);
Abstract

Edge termination structures for semiconductor devices are provided including a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surround a semiconductor junction. The spaced apart concentric floating guard rings have a highly doped portion and a lightly doped portion. Related methods of fabricating devices are also provided herein.


Find Patent Forward Citations

Zhang, Qingchun. (2017). Double guard ring edge termination for silicon carbide devices (U.S. Patent No. 9640609). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9640609

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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