The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Apr. 04, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2006.01); H01L 27/11548 (2017.01); H01L 27/11575 (2017.01); H01L 23/522 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/115 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1052 (2013.01); H01L 27/11548 (2013.01); H01L 27/11575 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a stacked structure having first conductive layers stacked stepwise and first insulating layers interposed between the first conductive layers, wherein undercuts are formed under the first conductive layers and each of the first conductive layers includes a first region covered by the first conductive layer and a second region extending from the first region, contact pads coupled to the second regions of the respective first conductive layers, and a liner layer formed on the contact pads and filling the undercuts.
Published as:
CN104733462A; US2015179564A1; KR20150073251A; US9331082B2; US2016218107A1; US9640542B2; CN109411478A; CN104733462B; CN109411478B;