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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9640478 B1

PDFFull Text
Date of Patent:
May. 02, 2017

Filed:

Jun. 25, 2015

Semiconductor device having low dielectric insulating film and manufacturing method of the same

Applicant:

Tera Probe, Inc., Yokohama, Kanagawa, JP;

Inventors:

Aiko Mizusawa, Kunitachi, JP;

Osamu Okada, Hamura, JP;

Takeshi Wakabayashi, Sayama, JP;

Ichiro Mihara, Tachikawa, JP;

Assignee:

AOI ELECTRONICS CO., LTD., Kagawa, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Matthew Landau

Assistant Examiner:

Krista Soderholm

Int. Cl.
CPC ...
H01L 23/488 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/78 (2006.01); H01L 23/29 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/78 (2013.01); H01L 23/296 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01); H01L 23/564 (2013.01); H01L 24/02 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/14 (2013.01); H01L 24/94 (2013.01); H01L 23/3121 (2013.01); H01L 23/525 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/274 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/14 (2013.01); H01L 2924/19043 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the bump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film.

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