The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Jan. 22, 2015
Freescale Semiconductor, Inc., Austin, TX (US);
Jun Tang, Tempe, AZ (US);
Chad S. Dawson, Queen Creek, AZ (US);
Andrew C. McNeil, Chandler, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A MEMS device comprises a substrate, a proof mass spaced apart from a surface of the substrate, and an over-travel stop structure. The over-travel stop structure includes a lateral stop structure and a cap coupled to the lateral stop structure. The MEMS device is fabricated to include relatively small gap sections and relatively large gap regions separating the lateral stop structure from the proof mass. The larger gap regions are covered by the cap and the smaller gap sections are exposed from the gap. During fabrication, removal of particles from the smaller gap sections is facilitated by their exposure from the cap and removal of particles from the larger gap regions underlying the cap is facilitated by their larger size. The lateral stop structure may be cross-shaped to limit deflection of the proof mass along two in-plane axes. The cap limits deflection of the proof mass along an out-of-plane axis.