The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Jul. 20, 2015
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Juing-Yi Wu, Hsinchu, TW;
Jyh-Kang Ting, Baoshan Township, TW;
Tsung-Chieh Tsai, Chu-Bei, TW;
Liang-Yao Lee, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
Among other things, one or more systems and techniques for defining one or more implant regions or for doping a semiconductor arrangement are provided. A first implant region is defined based upon a first implant mask overlaying a first active region of a semiconductor arrangement. A second implant region is defined based upon the first implant mask and a second implant mask overlaying a second active region of the semiconductor arrangement. A third implant region is defined based upon the second implant mask overlaying a third active region of the semiconductor arrangement. One or more doping processes are performed through the first implant mask and the second implant mask to dope the semiconductor arrangement. Because the first implant mask and the second implant mask overlap the second active region, doping area coverage is improved thus mitigating undesirable voltage threshold variations otherwise resulting from inadequate doping area coverage.