The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Aug. 20, 2015
Applicants:

University of West Bohemia IN Pilsen, Pilsen, CZ;

Trumpf Huettinger Sp. Z O. O., Zielonka, PL;

Inventors:

Rafal Bugyi, Warsaw, PL;

Jaroslav Vlcek, Plzen, PL;

Jiri Rezek, Plzen, PL;

Jan Lazar, Malenice, PL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/08 (2006.01); H01J 37/34 (2006.01); C23C 14/00 (2006.01); C23C 14/54 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0042 (2013.01); C23C 14/0094 (2013.01); C23C 14/08 (2013.01); C23C 14/548 (2013.01); H01J 37/3467 (2013.01);
Abstract

A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.


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