The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Sep. 11, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Jen Chan, Changhua, TW;
Lee-Chuan Tseng, New Taipei, TW;
Shih-Wei Lin, Taipei, TW;
Che-Ming Chang, Longtan Township, TW;
Chung-Yen Chou, Hsinchu, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.