The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Apr. 27, 2015
Freescale Semiconductor, Inc., Austin, TX (US);
Robert F. Steimle, Austin, TX (US);
Aaron A. Geisberger, Austin, TX (US);
Jeffrey D. Hanna, Spicewood, TX (US);
Ruben B. Montez, Cedar Park, TX (US);
NXP USA, INC., Austin, TX (US);
Abstract
A multi-wafer structure is formed by forming a cavity in a cap wafer and forming a first seal material around the cavity. A collapsible standoff structure is formed around the cavity. A movable mass is formed in a device wafer. A second seal material is formed around the movable mass. The first seal material and the second seal material are of materials that are able to form a eutectic bond at a eutectic temperature. The cap wafer and the device wafer are arranged so that the first and second seals are aligned but separated by the collapsible standoff structure. Gas is evacuated from the cavity at a temperature above the eutectic temperature using a low pressure. The temperature is lowered, the cap and device wafer are pressed together, and the temperature is raised above the eutectic temperature to form a eutectic bond with the first and second seal materials.