The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Oct. 30, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/87 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/761 (2013.01); H01L 21/76224 (2013.01); H01L 29/0638 (2013.01); H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/66143 (2013.01);
Abstract
In some embodiments, a semiconductor device includes a first well region configured to be an anode of the semiconductor device, a first doped region configured to be a cathode of the semiconductor device, a second doped region configured to be another cathode of the semiconductor device, and a conductive region. The first well region is disposed between the first doped region and the second doped region, and is configured for electrical connection of the conductive region.