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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9634151 B1

PDFFull Text
Date of Patent:
Apr. 25, 2017

Filed:

Feb. 02, 2016

High voltage junctionless field effect device and its method of fabrication

Applicant:

Zing Semiconductor Corporation, Shanghai, CN;

Inventors:

Deyuan Xiao, Shanghai, CN;

Richard R. Chang, Shanghai, CN;

Assignee:

ZING SEMICONDUCTOR CORPORATION, Shanghai, CN;

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 21/443 (2006.01); H01L 29/49 (2006.01); H01L 21/4763 (2006.01); H01L 21/027 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7886 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/0273 (2013.01); H01L 21/02266 (2013.01); H01L 21/02271 (2013.01); H01L 21/02568 (2013.01); H01L 21/02631 (2013.01); H01L 21/443 (2013.01); H01L 21/47635 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/10879 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/24 (2013.01); H01L 29/495 (2013.01); H01L 29/51 (2013.01); H01L 29/517 (2013.01); H01L 29/66969 (2013.01); H01L 29/785 (2013.01);
Abstract

A structure and a method of fabrication are disclosed of a high voltage junctionless field effect device. A channel layer and a barrier layer are formed sequentially underneath the gate structure. The width of energy band gap of the barrier layer is wider than that of the channel layer. Thus the two dimensional electron gas (2-DEG) generated in the interface between the channel layer and the barrier layer of this junctionless field effect device has higher electron mobility. The structure of the device of this disclosure has a higher breakdown voltage which is advantageous for a high voltage junctionless field device. The structure offers advantages in device performance and reliability.

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