The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jun. 19, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Wen Chu Hsiao, Tainan, TW;
Ju Wen Hsiao, Tainan, TW;
Ying Min Chou, Tainan, TW;
Hsiang Hsiang Ko, Tainan, TW;
Ying-Lang Wang, Tai-Chung County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes providing a gate structure over a semiconductor substrate and forming a source/drain region associated with the gate structure by etching an opening in the semiconductor substrate, performing a first epitaxial growth process while an entirety of a sidewall of the opening is exposed to grow a first epitaxy material in the opening. The first epitaxial growth process is free of a first dopant impurity. A second epitaxial growth process is performed after first epitaxial growth process to grow a second epitaxy material on the first epitaxy material. The second epitaxy material has the first dopant impurity at a first concentration. Further, a third epitaxial growth process is performed after the second epitaxial growth process that includes introducing the first dopant impurity at a second concentration, the second concentration greater than the first concentration.