The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jan. 14, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Tsu-Hui Su, Taipei, TW;
Chih-Ming Chen, Hsinchu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Szu-Yu Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A quantum nano-tip (QNT) thin film, such as a silicon nano-tip (SiNT) thin film, for flash memory cells is provided to increase erase speed. The QNT thin film includes a first dielectric layer and a second dielectric layer arranged over the first dielectric layer. Further, the QNT thin film includes QNTs arranged over the first dielectric layer and extending into the second dielectric layer. A ratio of height to width of the QNTs is greater than 50 percent. A QNT based flash memory cell and a method for manufacture a SiNT based flash memory cell are also provided.