The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Sep. 13, 2012
Applicants:

Stanislav Ivanovich Soloviev, Ballston Lake, NY (US);

Ahmed Elasser, Latham, NY (US);

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Alexey Vert, Clifton Park, NY (US);

Peter Almern Losee, Starkville, MS (US);

Inventors:

Stanislav Ivanovich Soloviev, Ballston Lake, NY (US);

Ahmed Elasser, Latham, NY (US);

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Alexey Vert, Clifton Park, NY (US);

Peter Almern Losee, Starkville, MS (US);

Assignee:

GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0676 (2013.01); H01L 27/0817 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.


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