The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Nov. 28, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Jochen Hilsenbeck, Villach, AT;
Jens Peter Konrath, Villach, AT;
Thomas Frank, Villach, AT;
Roland Rupp, Lauf, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/58 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/3121 (2013.01); H01L 23/585 (2013.01); H01L 29/43 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05623 (2013.01); H01L 2224/05624 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01);
Abstract
According to various embodiments, a semiconductor device may include: a layer stack formed at a surface of the semiconductor device, the layer stack including: a metallization layer including a first metal or metal alloy; a protection layer covering the metallization layer, the protection layer including a second metal or metal alloy, wherein the second metal or metal alloy is less noble than the first metal or metal alloy.