The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Sep. 02, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Satoshi Matsui, Yokohama Kanagawa, JP;
Mie Matsuo, Kamakura Kanagawa, JP;
Chiaki Takubo, Sumida Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to an embodiment, a method for manufacturing a semiconductor device includes: selectively forming a plurality of mask layers on a first surface of a semiconductor substrate, and the semiconductor substrate having the first surface and a second surface; dividing the semiconductor substrate by forming a gap piercing from the first surface to the second surface of the semiconductor substrate, the gap being formed by dry-etching the first surface of the semiconductor substrate exposed between the plurality of mask layers, and a width of the gap on the second surface side being larger than a width of the gap on the first surface side; and forming a first electrode under a reduced-pressure atmosphere on the first surface of the semiconductor substrate after the semiconductor substrate being divided.