The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Mar. 25, 2009
Shunpei Yamazaki, Setagaya, JP;
Eriko Nishida, Atsugi, JP;
Takashi Shimazu, Machida, JP;
Semiconductor Energy Laboratory Co., Ltd, Kanagawa-ken, JP;
Abstract
A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even if a single crystal semiconductor substrate including crystal defects is used. A first oxide film is formed on a single crystal semiconductor substrate; the first oxide film is removed; a surface of the single crystal semiconductor substrate from which the first oxide film is removed is irradiated with laser light; a second oxide film is formed on the single crystal semiconductor substrate; an embrittled region is formed in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the second oxide film; bonding the second oxide film and the semiconductor substrate so as to face each other; and the single crystal semiconductor substrate is separated at the embrittled region by heat treatment to obtain a single crystal semiconductor layer bonded to the semiconductor substrate.