The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Mar. 31, 2016
Globalfoundries Inc., Grand Cayman, KY;
Elliot John Smith, Dresden, DE;
Steffen Sichler, Radebeul, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A semiconductor structure includes a trench isolation structure, a trench capping layer, a gate structure and a sidewall spacer. The trench isolation structure includes a first electrically insulating material. The trench capping layer is provided over the trench isolation structure. The trench capping layer includes a second electrically insulating material that is different from the first electrically insulating material. The gate structure includes a gate insulation layer including a high-k material and a gate electrode over the gate insulation layer. The gate structure has a first portion over the trench capping layer. The sidewall spacer is provided adjacent the gate structure. A portion of the sidewall spacer is provided on the trench capping layer and contacts the trench capping layer laterally of the gate insulation layer.