The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jun. 24, 2016
Applicant:
Global Wafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Global Wafers Co., Ltd, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/227 (2006.01); H01L 21/04 (2006.01); H01L 21/425 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/304 (2006.01); H01L 29/20 (2006.01); H01L 21/223 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02178 (2013.01); H01L 21/02233 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/304 (2013.01); H01L 21/3046 (2013.01); H01L 21/324 (2013.01); H01L 29/2003 (2013.01); H01L 21/02255 (2013.01); H01L 21/223 (2013.01); H01L 21/2255 (2013.01);
Abstract
A heterostructure may include a substrate having a first primary surface, a second primary surface, and a diffusion layer extending a depth into the substrate from the first primary surface; and a deposition layer disposed on the second primary surface of the substrate. The heterostructure may further include an epitaxial layer disposed on the deposition layer.