The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Jul. 10, 2014
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Amul Dhirajbhai Desai, Fremont, CA (US);

Hao Nguyen, San Jose, CA (US);

Seungpil Lee, San Ramon, CA (US);

Man Mui, Fremont, CA (US);

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/32 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 7/08 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/32 (2013.01); G11C 7/08 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); H01L 27/115 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); G11C 16/16 (2013.01);
Abstract

In non-volatile memory circuits, the amount of time needed for bit lines to settle can vary significantly depending on the location of the blocks selected. For example, in a sensing operation, the amount of time for bit lines to settle when being pre-charged by sense amplifiers will be shorter for blocks near the sense amps than for far side blocks. These variations can be particularly acute in high density memory structures, such as in 3D NAND memory, such as that of the BiCS variety. Rather than use the same timing for all blocks, the blocks can be segmented into groups based on their proximity to the sense amps. When performing a sensing operation, the timing can be adjusted based on the block group to which a selected page of memory cells belongs.


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