The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Aug. 31, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Makoto Kitagawa, Folsom, CA (US);

Yogesh Luthra, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/16 (2013.01); G11C 13/0011 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0066 (2013.01); G11C 2013/0071 (2013.01); G11C 2013/0076 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/34 (2013.01); G11C 2213/55 (2013.01); G11C 2213/79 (2013.01);
Abstract

Memory systems and memory programming methods are described. According to one aspect, a memory system includes program circuitry configured to provide a program signal to a memory cell to program the memory cell from a first memory state to a second memory state, detection circuitry configured to detect the memory cell changing from the first memory state to the second memory state during the provision of the program signal to the memory cell to program the memory cell, and wherein the program circuitry is configured to alter the program signal as a result of the detection and to provide the altered program signal to the memory cell to continue to program the memory cell from the first memory state to the second memory state.


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