The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Dec. 26, 2014
Intel Corporation, Santa Clara, CA (US);
Nisarga Naik, Santa Clara, CA (US);
Oguz H. Elibol, Sunnyvale, CA (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
Disclosed herein is a method comprising: depositing a second electrode of each of a plurality of electrode pairs onto a substrate, through an opening of one or more resist layers; depositing a strip of a sacrificial layer directly on the second electrode through the same opening of the one or more resist layer; depositing a first electrode of each of the plurality of electrode pairs directly on the strip of the sacrificial layer through the same opening of the one or more resist layer; and forming a nanogap channel by removing the strip of the sacrificial layer; wherein the strip of the sacrificial layer is sandwiched between and in direct contact with the first electrode and the second electrode before the strip is removed, and wherein at least a portion of the first electrode directly faces at least a portion of the second electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile