The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Mar. 20, 2014
Applicant:
Nanyang Technological University, Singapore, SG;
Inventors:
Yongzhe Zhang, Singapore, SG;
Qijie Wang, Singapore, SG;
Assignee:
Nanyang Technological University, Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 27/144 (2006.01); H01L 31/18 (2006.01); B82Y 40/00 (2011.01); H01L 31/113 (2006.01); B82Y 10/00 (2011.01); H01L 29/778 (2006.01); H01L 29/12 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 27/1446 (2013.01); H01L 29/0673 (2013.01); H01L 29/127 (2013.01); H01L 29/1606 (2013.01); H01L 29/7781 (2013.01); H01L 31/028 (2013.01); H01L 31/1136 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); B82Y 30/00 (2013.01); H01L 21/0259 (2013.01); H01L 21/02527 (2013.01); H01L 21/02664 (2013.01);
Abstract
In various embodiments of the present disclosure, there is provided a method of manufacturing a monolayer graphene photodetector, the method including forming a graphene quantum dot array in a graphene monolayer, and forming an electron trapping center in the graphene quantum dot array. Accordingly, a monolayer graphene photodetector is also provided.