The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Nov. 20, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Kuang-Hsiu Chen, Tainan, TW;
Yi-Liang Ye, Kaohsiung, TW;
Chueh-Yang Liu, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, Taiwan, TW;
Abstract
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, an ILD layer on the semiconductor substrate, a gate in the ILD layer, an offset liner on a sidewall of the gate, a spacer on the offset liner, a dense oxide film on the spacer, a contact etch stop layer on the dense oxide film, and a contact plug adjacent to the contact etch stop layer. The semiconductor device further includes a source region in the semiconductor substrate and a drain region spaced apart from the source region. A channel is located between the source region and the drain region.