The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Mar. 02, 2010
Tsung-yi Huang, Hsinchu, TW;
Huan-ping Chu, Hsinchu, TW;
Ching-yao Yang, Zhubei, TW;
Hung-der Su, Zhudong Township, Hsinchu County, TW;
Tsung-Yi Huang, Hsinchu, TW;
Huan-Ping Chu, Hsinchu, TW;
Ching-Yao Yang, Zhubei, TW;
Hung-Der Su, Zhudong Township, Hsinchu County, TW;
RICHTEK TECHNOLOGY CORPORATION, R.O.C., Chupei, Hsinchu, TW;
Abstract
The present invention discloses a high voltage metal oxide semiconductor (HVMOS) device and a method for making same. The high voltage metal oxide semiconductor device comprises: a substrate; a gate structure on the substrate; a well in the substrate, the well defining a device region from top view; a first drift region in the well; a source in the well; a drain in the first drift region, the drain being separated from the gate structure by a part of the first drift region; and a P-type dopant region not covering all the device region, wherein the P-type dopant region is formed by implanting a P-type dopant for enhancing the breakdown voltage of the HVMOS device (for N-type HVMOS device) or reducing the ON resistance of the HVMOS device (for P-type HVMOS device).