The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Mar. 18, 2016
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Inventor:
Masahiro Nishi, Yokohama, JP;
Assignee:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/3081 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.