The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Mar. 18, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Noriyuki Iwamuro, Tsukuba, JP;
Yasuyuki Hoshi, Matsumoto, JP;
Yuichi Harada, Matsumoto, JP;
Shinsuke Harada, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
In an active region, pregions are selectively disposed in a surface layer of an ndrift layer on an nsemiconductor substrate. A p-base layer is disposed on surfaces of the ndrift layer and the Pregions, and an MOS structure is disposed on the p-base layer. In another portion of the active region, a pregion is disposed to be in contact with the source electrode on the pregions. In a breakdown voltage structure region (), a JTE structure having at least a Pregion is disposed separately from the Pregions and the p-base layer, to surround the active region. The Pregion is electrically in contact with the Pregion in a portion in which the MOS structure is not formed, in the vicinity of the boundary between the active region and the breakdown voltage structure region.