The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Sep. 18, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Po-Shu Wang, Hsinchu County, TW;
Chien-Mao Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device comprises: a semiconductor substrate with an active area defined by a plurality of isolation features; a gate stack extending across the active area onto portions of the isolation features, wherein the gate stack comprising a gate dielectric layer on the active area and the portions of the isolation features, and a gate electrode on the gate dielectric layer; and a protective seal comprising a vertical portion lining sidewalls of the gate stack and a horizontal portion extending onto a top surface of the isolation features, wherein the horizontal portion surrounding portions of the gate stack outside the active area in a top view.