The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Apr. 10, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyun-Min Choi, Uiwang-si, KR;

Shigenobu Maeda, Seongnam-si, KR;

Ji-Hoon Yoon, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); G11C 17/16 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); G11C 17/16 (2013.01); H01L 23/5252 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes: a plurality of fin-type active patterns which extend along a first direction, and are arranged with respect to each other along a second direction different from the first direction; a contact which is electrically connected to the plurality of fin-type active patterns; a first gate electrode which extends along the second direction and is formed on at least two of the plurality of fin-type active patterns; and a second gate electrode which extends along the second direction and is formed on at least one of the plurality of fin-type active patterns. The first gate electrode is disposed between the contact and the second gate electrode, and the number of fin-type active patterns intersected by the first gate electrode is greater than the number of fin-type active patterns intersected by the second gate electrode.


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