The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Dec. 02, 2011
Applicants:

Kenneth Shoemaker, Los Altos Hills, CA (US);

Pete Vogt, Boulder, CO (US);

Inventors:

Kenneth Shoemaker, Los Altos Hills, CA (US);

Pete Vogt, Boulder, CO (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 25/065 (2006.01); H01L 27/108 (2006.01); H01L 25/18 (2006.01); H01L 23/48 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 25/0652 (2013.01); H01L 25/18 (2013.01); H01L 27/108 (2013.01); H01L 27/10897 (2013.01); H01L 23/147 (2013.01); H01L 23/481 (2013.01); H01L 27/10882 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A stacked memory allowing variance in device interconnects. An embodiment of a memory device includes a system element for the memory device, the system element including multiple pads, and a memory stack connected with the system element, the memory stack having one or more memory die layers, a connection of the system element and the memory stack including interconnects for connecting a first memory die layer and the plurality of pads of the system element. For a single memory die layer in the memory stack, a first subset of the plurality of pads is utilized for a first group of interconnects for the connection of the system element and the memory stack, and for two or more memory die layers, the first subset and an additional second subset of the plurality of pads are utilized for the first group of interconnects and a second group of interconnects for the connection of the system element and the memory stack.


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