The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Nov. 17, 2010
Applicants:

Wolfgang Rietzler, Bludenz, AT;

Bart Scholte Van Mast, Azmoos, CH;

Inventors:

Wolfgang Rietzler, Bludenz, AT;

Bart Scholte Van Mast, Azmoos, CH;

Assignee:

EVATEC AG, TrĂ¼bbach, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 23/14 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/67207 (2013.01); H01L 21/6835 (2013.01); H01L 23/147 (2013.01); H01L 23/3128 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 23/3114 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/20 (2013.01); H01L 2224/92 (2013.01); H01L 2224/97 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A method of processing a substrate that displays out-gassing when placed in a vacuum comprises placing the substrate in a vacuum and performing an out-gassing treatment by heating the substrate to a temperature Tand removing gaseous contamination emitted from the substrate until the out-gassing rate is determined by the diffusion of the substrate's contamination and thus essentially a steady state has been established. Afterwards, the temperature is lowered to a temperature Tat which the diffusion rate of the substrate's contamination is lower than at T. The substrate is further processed at said temperature Tuntil the substrate has been covered with a film comprising a metal.


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