The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Dec. 23, 2011
Applicants:
Rahul Panat, Chandler, AZ (US);
Bhanu Jaiswal, Chandler, AZ (US);
Inventors:
Rahul Panat, Chandler, AZ (US);
Bhanu Jaiswal, Chandler, AZ (US);
Assignee:
INTEL CORPORATION, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/485 (2006.01); H01L 23/532 (2006.01); B82Y 30/00 (2011.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); B82Y 30/00 (2013.01); H01L 21/02603 (2013.01); H01L 21/7685 (2013.01); H01L 21/76834 (2013.01); H01L 23/49866 (2013.01); H01L 29/0673 (2013.01); H01L 21/02491 (2013.01); H01L 21/02494 (2013.01); H01L 21/02554 (2013.01); H01L 21/02628 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Methods and devices including the formation of a layer of nanowires on wiring line traces are described. One device comprises a first dielectric layer and a plurality of traces on the first dielectric layer, the traces comprising Cu. The traces include a layer of ZnO nanowires positioned thereon. A second dielectric layer is positioned on the first dielectric layer and on the traces, wherein the second dielectric layer is in direct contact with the ZnO nanowires. Other embodiments are described and claimed.