The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
May. 27, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Roberto Somaschini, Vimercate, IT;
Alessandro Vaccaro, Boise, ID (US);
Paolo Tessariol, Montevelluna, IT;
Giulio Albini, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/105 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11521 (2017.01);
U.S. Cl.
CPC ...
H01L 21/76811 (2013.01); H01L 21/7684 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/1052 (2013.01); H01L 27/11521 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.