The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9627249 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 18, 2017

Filed:

Sep. 17, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Hsiang Tsai, Hsinchu, TW;

Chung-Chuan Tseng, Hsinchu, TW;

Chia-Wei Liu, Hsinchu County, TW;

Li-Hsin Chu, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/324 (2013.01); H01L 21/76243 (2013.01); H01L 29/0623 (2013.01);
Abstract

A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.


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Tsai, Yu-Hsiang. (2017). Semiconductor structure and method for manufacturing the same (U.S. Patent No. 9627249). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9627249

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