The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Nov. 04, 2015
Applicant:
Macronix International Co., Ltd., Hsin-Chu, TW;
Inventors:
Jr-Meng Wang, Hsinchu, TW;
Chih-Yuan Wu, Hsinchu, TW;
Kuanf-Wen Liu, Hsinchu, TW;
Jung-Yi Guo, Tainan, TW;
Chun-Min Cheng, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 27/0207 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract
Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. The methods may include two or more nitride removal steps during formation of gate layers in vertical memory cells. The two or more nitride removal steps may allow for wider gate layers increasing the gate fill-in, reducing the occurrence of voids, and thereby improving the word line resistance.